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A Product Line of
Diodes Incorporated
DMN6066SSD
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
0.5
± 100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Notes 10 & 11)
Diode Forward Voltage (Note 10)
Reverse recovery time (Note 11)
Reverse recovery charge (Note 11)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
0.048
0.068
19.2
0.89
22.2
16.9
3.0
0.066
0.097
?
1.15
?
?
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 4.5A
V GS = 4.5V, I D = 3.5A
V DS = 15V, I D = 6A
I S = 4.5A, V GS = 0V
I S = 1.9A, di/dt= 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
502
45.7
27.1
5.4
10.3
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = 30V, V GS = 0V
f= 1MHz
V GS = 4.5V
V DS = 30V
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Q gs
Q gd
t D(on)
?
?
?
1.7
3.2
2.7
?
?
?
nC
nC
ns
V GS = 10V
I D = 4.5A
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
t r
t D(off)
t f
?
?
?
2.4
14.7
5.4
?
?
?
ns
ns
ns
V DD = 30V, V GS = 10V
I D = 1A, R G ? 6.0 Ω
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.
DMN6066SSD
Document Number DS32109 Rev 3 - 2
4 of 9
www.diodes.com
December 2011
? Diodes Incorporated
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